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STFW3N170 데이터시트(PDF) 3 Page - STMicroelectronics |
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STFW3N170 데이터시트(HTML) 3 Page - STMicroelectronics |
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3 / 12 page ![]() STFW3N170 Electrical ratings DocID023985 Rev 3 3/12 1 Electrical ratings Table 2: Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage 1700 V VGS Gate-source voltage ±30 V ID(1) Drain current (continuous) at Tcase = 25 °C 2.6 A Drain current (continuous) at Tcase = 100 °C 1.6 IDM Drain current (pulsed) 10.4 A PTOT Total dissipation at Tcase = 25 °C 63 W IAR Avalanche current, repetitive or not repetitive 0.8 A EAS(2) Single pulse avalanche energy 2 mJ VISO Insulation withstand voltage (RMS) from all three leads to external heat sink (t = 1 s; TC = 25 °C) 3.5 kV Tstg Storage temperature -55 to 150 °C Tj Operating junction temperature Notes: (1) Limited by maximum junction temperature. (2) starting Tj = 25 °C, ID = IAR, VDD = 50 V. Table 3: Thermal data Symbol Parameter Value Unit Rthj-case Thermal resistance junction-case 2 °C/W Rthj-amb Thermal resistance junction-ambient 50 |
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