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전자부품 데이터시트 검색엔진 |
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전자부품 데이터시트 검색엔진 |
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STL8N6F7 데이터시트(PDF) 5 Page - STMicroelectronics |
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STL8N6F7 데이터시트(HTML) 5 Page - STMicroelectronics |
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5 / 12 page  STL8N6F7 Electrical characteristics DocID028258 Rev 1 5/12 Table 7: Source-drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit VSD (1) Forward on voltage ISD = 8 A, VGS = 0 V - 1.2 V trr Reverse recovery time ID = 8 A, di/dt = 100 A/µs VDD = 48 V (see Figure 4: "Test circuit for inductive load switching and diode recovery times" ) - TBD ns Qrr Reverse recovery charge - TBD nC IRRM Reverse recovery current - TBD A Notes: (1)Pulsed: pulse duration = 300 µs, duty cycle 1.5% |
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