SI7448DP datasheet(2/4 Pages) VISHAY

2 / 4 page

Si7448DP

Vishay Siliconix

www.vishay.com

Document Number: 71635

S-31728—Rev. B, 18-Aug-03

MOSFET SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)

Parameter

Symbol

Test Condition

Min

Typ

Max

Unit

Static

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = 250 mA

0.6

Gate-Body Leakage

IGSS

VDS = 0 V, VGS = "12 V

"100

Zero Gate Voltage Drain Current

IDSS

VDS = 16 V, VGS = 0 V

Zero Gate Voltage Drain Current

IDSS

VDS = 16 V, VGS = 0 V, TJ = 85_C

On-State Drain CurrentNO TAG

ID(on)

VDS w 5 V, VGS = 4.5 V

Drain-Source On-State ResistanceNO TAG

rDS(on)

VGS = 4.5 V, ID = 22 A

0.0054

0.0065

Drain-Source On-State ResistanceNO TAG

rDS(on)

VGS = 2.5 V, ID = 19 A

0.0075

0.009

Forward TransconductanceNO TAG

gfs

VDS = 15 V, ID = 22 A

Diode Forward VoltageNO TAG

VSD

IS = 3 A, VGS = 0 V

0.8

1.2

DynamicNO TAG

Total Gate Charge

Gate-Source Charge

Qgs

VDS = 10 V, VGS = 4.5 V, ID = 21 A

Gate-Drain Charge

Qgd

8.5

Gate-Resistance

0.2

0.9

1.1

Turn-On Delay Time

td(on)

Rise Time

VDD = 10 V, RL = 10 W

Turn-Off Delay Time

td(off)

VDD = 10 V, RL = 10 W

ID ^ 1 A, VGEN = 10 V, RG = 6 W

125

190

Fall Time

Source-Drain Reverse Recovery Time

trr

IF = 3 A, di/dt = 100 A/ms

Notes

Pulse test; pulse width

v 300 ms, duty cycle v 2%.

Guaranteed by design, not subject to production testing.

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

0.0

0.5

1.0

1.5

2.0

2.5

012345

VGS = 4.5 thru 2.5 V

TC = 125_C

2 V

-55

1.5 V

Output Characteristics

Transfer Characteristics

VDS - Drain-to-Source Voltage (V)

VGS - Gate-to-Source Voltage (V)

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