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2STC4793 데이터시트(PDF) 3 Page - STMicroelectronics |
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2STC4793 데이터시트(HTML) 3 Page - STMicroelectronics |
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3 / 7 page ![]() 2STC4793 Electrical characteristics Doc ID 15401 Rev 2 3/7 2 Electrical characteristics Tcase = 25 °C unless otherwise specified. Table 4. Electrical characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit ICBO Collector cut-off current (IE = 0) VCB = 230 V 1 µA IEBO Emitter cut-off current (IC = 0) VEB = 5 V 1 µA V(BR)CEO (1) 1. Pulse test: pulse duration ≤ 300 µs, duty cycle ≤ 2 % Collector-emitter breakdown voltage (IB = 0) IC = 10 mA 230 V V(BR)CBO Collector-base breakdown voltage (IE = 0) IC = 100 µA 230 V V(BR)EBO (1) Emitter-base breakdown voltage (IC = 0) IE = 1 mA 5 V VCE(sat) (1) Collector-emitter saturation voltage IC = 0.5 A IB = 50 mA 1 V VBE Base-emitter voltage IC = 0.5 A VCE = 5 V 1 V hFE DC current gain IC = 0.1 A VCE = 5 V 100 320 fT Transition frequency IC = 0.1 A VCE = 10 V 100 MHz CCBO Collector-base capacitance (IE = 0) VCB = 10 V f = 1 MHz 20 pF Obsolete Product(s) - Obsolete Product(s) |
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