Preliminary data

This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to

change without notice.

January 2010

Doc ID 16984 Rev 1

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7

2STF2280

Low voltage high performance PNP power transistor

Features

Applications

Description

The device is a PNP transistor manufactured

using new “PB-HCD” (power bipolar high current

density) technology. The resulting transistor

shows exceptional high gain performances

coupled with very low saturation voltage.

Figure 1.

Internal schematic diagram

SOT-89

4

3

2

1

Table 1.

Device summary

Order code

Marking

Package

Packaging

2STF2280

2280

SOT-89

Tape and reel

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