ST13003DN datasheet(3/8 Pages) STMICROELECTRONICS

부품명	ST13003DN

상세설명	High voltage fast-switching NPN power transistor

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제조업체	STMICROELECTRONICS [STMicroelectronics]

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ST13003DN

Electrical characteristics

Doc ID 17186 Rev 1

3/8

Electrical characteristics

Tcase = 25 °C; unless otherwise specified.

Table 4.

Electrical characteristics

Symbol

Parameter

Test conditions

Min.

Typ. Max. Unit

ICES

Collector cut-off current

(VBE = 0)

VCE = 700 V

TC = 125 °C

IEBO

Emitter cut-off current

(IC = 0)

VEB = 9 V

VCEO(sus)

(1)

Pulse test: pulse duration

≤ 300 µs, duty cycle ≤ 2 %

Collector-emitter sustaining

voltage (IB = 0)

IC = 10 mA

400

VCE(sat)

(1)

Collector-emitter saturation

voltage

IC = 0.5 A

IB = 125 mA

IC = 1 A

IB = 330 mA

0.7

1.2

VBE(sat)

(1)

Base-emitter saturation

voltage

IC = 0.5 A

IB = 125 mA

IC = 1 A

IB = 330 mA

1.2

1.3

hFE

DC current gain

IC = 0.5 A,

VCE = 2 V

IC = 1 A

VCE = 10 V

Inductive Load

Storage time

Fall time

IC = 0.4 A _ Vclamp = 300 V

IB(on) = -IB(off) = 80 mA

VBB(off) = - 5 V

Figure 2

2.5

180

µs

Diode forward voltage

IF = 350 mA

1.5

Obsolete

Product(s)

- Obsolete

Product(s)

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