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STGP10H60DF 데이터시트(PDF) 6 Page - STMicroelectronics

부품명 STGP10H60DF
상세설명  Trench gate field-stop IGBT, H series 600 V, 10 A high speed
PDF  24 Pages
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제조업체  STMICROELECTRONICS [STMicroelectronics]
홈페이지  http://www.st.com
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STGP10H60DF 데이터시트(HTML) 6 Page - STMicroelectronics

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Electrical characteristics
STGB10H60DF, STGF10H60DF, STGP10H60DF
6/24
DocID025111 Rev 2
Table 8. Collector-emitter diode
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
V
F
Forward on-voltage
I
F
= 10 A
I
F
= 10 A, T
J
= 175 °C
-
1.7
1.3
2.2
V
V
t
rr
Reverse recovery time
V
r
= 60 V; IF = 10 A;
di
F
/dt = 100 A / μs
-
107
ns
Q
rr
Reverse recovery charge
-
120
nC
I
rrm
Reverse recovery current
-
2.24
A
t
rr
Reverse recovery time
V
r
= 60 V; IF = 10 A;
di
F
/dt = 100 A / μs
T
J
= 175 °C
-
161
ns
Q
rr
Reverse recovery charge
-
362
nC
I
rrm
Reverse recovery current
-
4.5
A



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