STGP30H60DF datasheet(4/24 Pages) STMICROELECTRONICS

부품명	STGP30H60DF

상세설명	600 V, 30 A high speed trench gate field-stop IGBT

PDF	24 Pages

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제조업체	STMICROELECTRONICS [STMicroelectronics]

홈페이지	http://www.st.com

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Electrical characteristics

STGB30H60DF, STGF30H60DF, STGP30H60DF, STGW30H60DF

4/24

DocID022363 Rev 3

Electrical characteristics

TJ = 25 °C unless otherwise specified.

Table 4. Static

Symbol

Parameter

Test condition

Min.

Typ.

Max.

Unit

V(BR)CES

Collector-emitter breakdown voltage

(VGE = 0)

IC = 2 mA

600

VCE(sat)

Collector-emitter saturation voltage

VGE = 15 V, IC = 30 A

2.0

2.4

VGE = 15 V, IC = 30 A

TJ = 175 °C

2.4

VGE(th)

Gate threshold voltage

VCE = VGE, IC = 1 mA

5.0

6.0

7.0

ICES

Collector cut-off current (VGE = 0)

VCE = 600 V

µA

IGES

Gate-emitter leakage

current (VCE = 0)

VGE = ± 20 V

250

Table 5. Dynamic

Symbol

Parameter

Test condition

Min.

Typ.

Max.

Unit

Cies

Input capacitance

VCE = 25 V, f = 1 MHz,

VGE = 0

3600

Coes

Output capacitance

130

Cres

Reverse transfer capacitance

Total gate charge

VCC = 400 V, IC = 30 A,

VGE = 15 V

-105

Qge

Gate-emitter charge

Qgc

Gate-collector charge

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