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STGP30H60DFB 데이터시트(PDF) 8 Page - STMicroelectronics

부품명 STGP30H60DFB
상세설명  Trench gate field-stop IGBT, HB series 600 V, 30 A high speed
PDF  21 Pages
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제조업체  STMICROELECTRONICS [STMicroelectronics]
홈페이지  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STGP30H60DFB 데이터시트(HTML) 8 Page - STMicroelectronics

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Electrical characteristics
STGB30H60DFB, STGP30H60DFB
8/21
DocID026677 Rev 2
Figure 14. Capacitance variation
Figure 15. Gate charge vs. gate-emitter voltage
C
10
VCE(V)
(pF)
0.1
1
10
Cies
100
1000
Coes
Cres
100
GIPG090720141358FSR
VGE
(V)
4
2
0
0
Qg(nC)
40
80
120
160
6
8
10
12
14
VCC= 520V, IC= 30A
IG= 1mA
16
GIPG280120141455FSR
Figure 16. Switching loss vs collector current
Figure 17. Switching loss vs gate resistance
E
0
IC(A)
(μJ)
010
20
400
30
40
800
EON
1200
VCC = 400V, VGE = 15V,
RG = 10Ω, TJ = 175°C
50
EOFF
1600
60
GIPG090720141414FSR
E
20
RG(Ω)
(μJ)
310
17
220
420
620
24
31
820
EOFF
VCC = 400 V, VGE = 15 V,
IC = 30 A, TJ = 175 °C
EON
38
1020
1220
1420
GIPG090720141421FSR
Figure 18. Switching loss vs temperature
Figure 19. Switching loss vs collector-emitter
voltage
E
0
TJ(°C)
(μJ)
20
60
200
400
600
100
140
EOFF
VCC= 400V, VGE= 15V,
RG= 10Ω, IC= 30A
EON
800
GIPG090720141431FSR
E
0
VCE(V)
(μJ)
150
400
800
1200
EOFF
TJ= 175°C, VGE= 15V,
RG= 10Ω, IC= 30A
1600
EON
250
350
450
GIPG090720141440FSR



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