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GF100N30 데이터시트(PDF) 1 Page - STMicroelectronics |
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GF100N30 데이터시트(HTML) 1 Page - STMicroelectronics |
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1 / 13 page ![]() February 2009 Rev 1 1/13 13 STGF100N30 STGP100N30, STGW100N30 90 A - 330 V - fast IGBT Features ■ Optimized for sustain and energy recovery circuits in PDP applications. ■ State-of-the-art STripFET™ technology ■ Peak collector current IRP = 330 A @ TC = 25 °C (see Table 2) ■ Very low-on voltage drop (VCE(sat)) and energy per pulse for improved panel efficiency ■ High repetitive peak current capability Description Advanced high-density and high-current IGBT technology with low-drop companion diode adapted to various functions in PDP sets. Figure 1. Internal schematic diagram TO-247 1 2 3 1 2 3 1 2 3 TO-220FP TO-220 Table 1. Device summary Order codes Marking Package Packaging STGF100N30 GF100N30 TO-220FP Tube STGP100N30 GP100N30 TO-220 Tube STGW100N30 GW100N30 TO-247 Tube www.st.com Obsolete Product(s) - Obsolete Product(s) |
유사한 부품 번호 - GF100N30 |
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유사한 설명 - GF100N30 |
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