STGFW40V60DF datasheet(3/21 Pages) STMICROELECTRONICS

부품명	STGFW40V60DF

상세설명	Trench gate field-stop IGBT, V series 600 V, 40 A very high speed

PDF	21 Pages

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제조업체	STMICROELECTRONICS [STMicroelectronics]

홈페이지	http://www.st.com

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DocID024402 Rev 8

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STGFW40V60DF, STGW40V60DF, STGWT40V60DF

Electrical ratings

Table 2. Absolute maximum ratings

Symbol

Parameter

Value

Unit

TO-247

TO-3P

TO-3PF

VCES

Collector-emitter voltage (VGE = 0)

600

Continuous collector current at TC = 25 °C

Continuous collector current at TC = 100 °C

ICP

(1)

Pulse width limited by maximum junction temperature

Pulsed collector current

160

VGE

Gate-emitter voltage

±20

Continuous forward current at TC = 25 °C

Continuous forward current at TC = 100 °C

IFP

(1)

Pulsed forward current

160

PTOT

Total dissipation at TC = 25 °C

283

62.5

VISO

Insulation withstand voltage (RMS) from all three

leads to external heat sink (t = 1 s; Tc = 25 °C)

3.5

TSTG

Storage temperature range

- 55 to 150

°C

Operating junction temperature

- 55 to 175

°C

Table 3. Thermal data

Symbol

Parameter

Value

Unit

TO-247

TO-3P

TO-3PF

RthJC

Thermal resistance junction-case IGBT

0.53

2.4

°C/W

RthJC

Thermal resistance junction-case diode

1.14

°C/W

RthJA

Thermal resistance junction-ambient

°C/W

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