This is information on a product in full production.

December 2013

DocID025631 Rev 1

1/13

13

STGP30H65F

Trench gate field-stop IGBT, H series

650 V, 30 A high speed

Figure 1. Internal schematic diagram

Features

• High speed switching

• Tight parameters distribution

• Safe paralleling

• Low thermal resistance

• Short-circuit rated

Applications

• Inverter

• UPS

• PFC

Description

This device is an IGBT developed using an

advanced proprietary trench gate and field stop

structure. This IGBT series offers the optimum

compromise between conduction and switching

losses, maximizing the efficiency of very high

frequency converters. Furthermore, a positive

V

CE(sat)

temperature coefficient and very tight

parameter distribution result in easier paralleling

operation.

1

2

3

TO-220

TAB

C (2, TAB)

G (1)

E (3)

Table 1. Device summary

Order codes

Marking

Package

Packaging

STGP30H65F

GP30H65F

TO-220

Tube

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