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STGWA35HF60WDI 데이터시트(PDF) 7 Page - STMicroelectronics

부품명 STGWA35HF60WDI
상세설명  35 A, 600 V ultrafast IGBT with low drop diode
PDF  15 Pages
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제조업체  STMICROELECTRONICS [STMicroelectronics]
홈페이지  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STGWA35HF60WDI 데이터시트(HTML) 7 Page - STMicroelectronics

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STGW35HF60WDI
Electrical characteristics
Doc ID 16090 Rev 3
7/15
Figure 8.
Gate charge vs. gate-emitter
voltage
Figure 9.
Capacitance variations
Figure 10.
Switching losses vs temperature
Figure 11.
Switching losses vs gate resistance
Figure 12.
Switching losses vs collector
current
Figure 13.
Diode forward on voltage
0
4
8
12
16
0
30
60
90
120
150
QG (nC)
V GE (V)
V CC = 400 V
IC = 20 A
AM10153V1
0
1000
2000
3000
4000
5000
0
10
20
304050
V CE (V)
C (pF)
f = 1 MHz
V GE = 0
C ies
C oes
C res
AM10154V1
150
200
250
300
350
400
450
25
50
75
100
125
TJ (°C)
E (µJ)
V CE = 400 V, V GE = 15 V
IC = 20 A, R G =10 Ω
E OFF
AM10157V1
0
500
1000
1500
2000
0
60
120
180
240
R g (Ω)
E (µJ)
E OFF
V CE = 400 V, V GE = 15 V
IC = 20 A, T J = 125 °C
AM10158V1
0
200
400
600
800
1000
10
15
20
25
30
35
40
IC (A)
E (µJ)
V CE = 400 V, V GE = 15 V
R G = 10 Ω, T J = 125 °C
E OFF
AM10159V1
AM10156V1



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