| 전자부품 데이터시트 검색엔진 |
|
STGWA40M120DF3 데이터시트(PDF) 1 Page - STMicroelectronics |
|
|
|||||||||||||||||||||||||||||
STGWA40M120DF3 데이터시트(HTML) 1 Page - STMicroelectronics |
|
1 / 18 page ![]() This is information on a product in full production. November 2014 DocID026224 Rev 3 1/18 18 STGW40M120DF3 STGWA40M120DF3 Trench gate field-stop IGBT, M series 1200 V, 40 A low loss Datasheet - production data Figure 1.Internal schematic diagram Features • 10 µs of short-circuit withstand time • VCE(sat) = 1.85 V (typ.) @ IC = 40 A • Tight parameters distribution • Safer paralleling • Low thermal resistance • Soft and fast recovery antiparallel diode Applications • Industrial drives • UPS • Solar • Welding Description This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series of IGBTs, which represent an optimum compromise in performance to maximize the efficiency of inverter systems where low-loss and short circuit capability are essential. Furthermore, a positive VCE(sat) temperature coefficient and tight parameter distribution result in safer paralleling operation. Table 1. Device summary Order code Marking Package Packaging STGW40M120DF3 G40M120DF3 TO-247 Tube STGWA40M120DF3 G40M120DF3 TO-247 long leads Tube www.st.com |
유사한 부품 번호 - STGWA40M120DF3 |
|
유사한 설명 - STGWA40M120DF3 |
|
|
|
링크 URL |
| ALLDATASHEET 가 귀하에 도움이 되셨나요? [ DONATE ] |
Alldatasheet는? | 광고문의 | 운영자에게 연락하기 | 개인정보취급방침 | 링크 투 데이터시트 | 링크교환 | 제조사별 검색 All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |