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STGW60V60F 데이터시트(PDF) 5 Page - STMicroelectronics |
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STGW60V60F 데이터시트(HTML) 5 Page - STMicroelectronics |
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5 / 14 page ![]() DocID024701 Rev 2 5/14 STGW60V60F Electrical characteristics Table 6. IGBT switching characteristics (inductive load) Symbol Parameter Test conditions Min. Typ. Max. Unit t d(on) (1) Turn-on delay time V CE = 400 V, I C = 60 A, R G = 4.7 Ω, V GE = 15 V , see Figure 22 -60- ns t r (1) Current rise time - 20 - ns (di/dt) on (1) Turn-on current slope - 2365 - A/μs t d(off) Turn-off delay time - 208 - ns t f Current fall time - 14 - ns E on (1) 1. Switching-on times and energy have been calculated applying the STGW60V60DF's co-pack diode in the high side of the test circuit in Figure 22. Both IGBT and diode are at the same temperature. Energy losses include reverse recovery of the diode. Turn-on switching losses - 0.75 - mJ E off (2) 2. Turn-off losses include also the tail of the collector current. Turn-off switching losses - 0.55 - mJ E ts Total switching losses - 1.3 - mJ t d(on) (1) Turn-on delay time V CE = 400 V, I C = 60 A , R G = 4.7 Ω, V GE = 15 V, T J = 175 °C, see Figure 22 -57- ns t r (1) Current rise time - 23 - ns (di/dt) on (1) Turn-on current slope - 2191 - A/μs t d(off) Turn-off delay time - 216 - ns t f Current fall time - 27 - ns E on (1) Turn-on switching losses - 1.5 - mJ E off (2) Turn-off switching losses - 0.8 - mJ E ts Total switching losses - 2.3 - mJ |
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