STGW80V60DF datasheet(1/18 Pages) STMICROELECTRONICS

부품명	STGW80V60DF

상세설명	Low thermal resistance

PDF	18 Pages

Scroll/Zoom	100%

제조업체	STMICROELECTRONICS [STMicroelectronics]

홈페이지	http://www.st.com

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1 / 18 page

This is information on a product in full production.

January 2014

DocID024362 Rev 2

1/18

18

STGW80V60DF

STGWT80V60DF

Trench gate field-stop IGBT, V series

600 V, 80 A very high speed

Datasheet - production data

Figure 1. Internal schematic diagram

Features

• Maximum junction temperature: T

J

= 175 °C

• Tail-less switching off

• V

CE(sat)

= 1.85 V (typ.) @ I

C

= 80 A

• Tight parameters distribution

• Safe paralleling

• Low thermal resistance

• Very fast soft recovery antiparallel diode

Applications

• Photovoltaic inverters

• Uninterruptible power supply

• Welding

• Power factor correction

• Very high frequency converters

Description

This device is an IGBT developed using an

advanced proprietary trench gate field stop

structure. The device is part of the V series of

IGBTs, which represent an optimum compromise

between conduction and switching losses to

maximize the efficiency of very high frequency

converters. Furthermore, a positive V

CE(sat)

temperature coefficient and very tight parameter

distribution result in safer paralleling operation.

C (2 or TAB)

G (1)

E (3)

TO-247

1

2

3

TO-3P

1

2

3

TAB

Table 1. Device summary

Order code

Marking

Package

Packaging

STGW80V60DF

GW80V60DF

TO-247

Tube

STGWT80V60DF

GWT80V60DF

TO-3P

Tube

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