STGWA40H65DFB datasheet(5/17 Pages) STMICROELECTRONICS

5 / 17 page

STGWA40H65DFB

Electrical characteristics

DocID029398 Rev 1

5/17

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Eon(1)

Turn-on

switching

energy

498

µJ

Eoff(2)

Turn-off

switching

energy

363

Ets

Total switching

energy

861

td(on)

Turn-on delay

time

VCE = 400 V, IC = 40 A, VGE = 15 V,

RG = 5

Ω, TJ = 175 °C (see Figure 28: "

Test circuit for inductive load switching" )

Current rise

time

(di/dt)on

Turn-on

current slope

2186

A/µs

td(off)

Turn-off-delay

time

141

Current fall

time

Eon(1)

Turn-on

switching

energy

1417

µJ

Eoff(2)

Turn-off

switching

energy

764

Ets

Total switching

energy

2181

Notes:

(1)Including the reverse recovery of the diode.

(2)Including the tail of the collector current.

Table 7: Diode switching characteristics (inductive load)

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

trr

Reverse recovery

time

IF = 40 A, VR = 400 V, VGE = 15 V,

di/dt = 100 A/µs (see Figure 28: " Test

circuit for inductive load switching")

Qrr

Reverse recovery

charge

Irrm

Reverse recovery

current

3.3

dIrr/dt

Peak rate of fall of

reverse recovery

current during tb

187

A/µs

Err

Reverse recovery

energy

µJ

trr

Reverse recovery

time

IF = 40 A, VR = 400 V, VGE = 15 V,

TJ = 175 °C, di/dt = 100 A/µs

310

STGWA40H65DFB 데이터시트(PDF) 5 Page - STMicroelectronics

STGWA40H65DFB 데이터시트(HTML) 5 Page - STMicroelectronics

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17

데이터시트 다운로드

링크 URL