STPS2H100RL datasheet(3/4 Pages) STMICROELECTRONICS

3 / 4 page

STPS2H100

3/4

I (µA)

1.E-02

1.E-01

1.E+00

1.E+01

1.E+02

1.E+03

2040

6080

100

V (V)

T =125°C

T =150°C

T =100°C

T =50°C

T =25°C

T =75°C

Fig. 7: Reverse leakage current versus reverse

voltage applied (typical values).

(A)

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1.1

1.2

(V)

T =25°C

(maximum values)

T =125°C

(maximum values)

T =125°C

(typical values)

Fig. 9-1: Forward voltage drop versus forward

current (low level).

C(pF)

100

V (V)

F=1MHz

=30mV

T =25°C

OSC

Fig. 8:

Junction capacitance versus reverse

voltage applied (typical values).

(A)

100

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1.1

1.2

1.3

1.4

1.5

1.6

1.7

1.8

(V)

T =125°C

(typical values)

T =125°C

(maximum values)

T =25°C

(maximum values)

Fig. 9-2: Forward voltage drop versus forward

current (high level).

I (A)

1.E-03

1.E-02

1.E-01

1.E+00

δ=0.5

t(s)

T =25°C

T =75°C

T =125°C

Fig. 5: Non repetitive surge peak forward current

versus overload duration (maximum values).

Z/R

th(j-a)

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1.E-02

1.E-01

1.E+00

1.E+01

1.E+02

1.E+03

δ=tp/T

t (s)

δ = 0.5

δ = 0.2

δ = 0.1

Single pulse

Fig. 6: Relative variation of thermal impedance

junction to ambient versus pulse duration.

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