TAS5721 datasheet(7/78 Pages) TI1

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TAS5721

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SLOS739A – JULY 2012 – REVISED MARCH 2016

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For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application

report, SPRA953.

7.4 Thermal Information

THERMAL METRIC(1)

TAS5721

UNIT

DCA (HTSSOP)

48 PINS

RθJA

Junction-to-ambient thermal resistance

27.9

°C/W

RθJC(top)

Junction-to-case (top) thermal resistance

20.7

°C/W

RθJB

Junction-to-board thermal resistance

°C/W

ψJT

Junction-to-top characterization parameter

0.3

°C/W

ψJB

Junction-to-board characterization parameter

6.7

°C/W

RθJC(bot)

Junction-to-case (bottom) thermal resistance

1.1

°C/W

7.5 Electrical Characteristics – I/O Pin Characteristics

PVDD = 18 V, AVDD = DRVDD = DVDD = 3.3 V, external components per Typical Application diagrams, and in accordance

with recommended operating conditions (unless otherwise specified).

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

VOH

High-level output voltage

ADR/FAULT and SDA

IOH = –4 mA

DVDD = AVDD = 3 V

2.4

VOL

Low-level output voltage

IOL = 4 mA

DVDD = AVDD = 3 V

0.5

IIL

Low-level input current

Digital Inputs

VI < VIL ; DVDD = AVDD

= 3.6 V

μA

IIH

High-level input current

VI > VIH ; DVDD =

AVDD = 3.6 V

IDD

3.3 V supply current

3.3 V supply voltage (DVDD,

AVDD)

Normal mode

Reset (RST = low, PDN

= high, DR_SD = low)

tw(RST)

Pulse duration, RST active

RST

100

μs

td(I2C_ready)

Time before the I2C port is able

communicate after RST goes

high

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