L6491D datasheet(1/24 Pages) STMICROELECTRONICS

부품명	L6491D

상세설명	Power supply unit

PDF	24 Pages

Scroll/Zoom	100%

제조업체	STMICROELECTRONICS [STMicroelectronics]

홈페이지	http://www.st.com

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1 / 24 page

This is information on a product in full production.

March 2015

DocID024832 Rev 1

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L6491

High voltage high and low-side 4 A gate driver

Datasheet

- production data

Features

 High voltage rail up to 600 V

 dV/dt immunity ± 50 V/ns in full temperature

range

 Driver current capability: 4 A source/sink

 Switching times 15 ns rise/fall with 1 nF load

 3.3 V, 5 V TTL/CMOS inputs with hysteresis

 Integrated bootstrap diode

 Comparator for fault protections

 Smart shutdown function

 Adjustable deadtime

 Interlocking function

 Compact and simplified layout

 Bill of material reduction

 Effective fault protection

 Flexible, easy and fast design

Applications

 Motor driver for home appliances, factory

automation, industrial drives and fans

 HID ballasts

 Power supply unit

 Induction heating

 Wireless chargers

 Industrial inverters

 UPS

Description

The L6491 is a high voltage device manufactured

with the BCD6 “OFF-LINE” technology. It is

a single-chip half-bridge gate driver for N-channel

power MOSFET or IGBT.

The high-side (floating) section is designed to

stand a voltage rail up to 600 V. The logic inputs

are CMOS/TTL compatible down to 3.3 V for easy

interfacing microcontroller/DSP.

An integrated comparator is available for fast

protection against overcurrent, overtemperature,

etc.

SO-14

Table 1. Device summary

Order code

Package

Packaging

L6491D

SO-14

Tube

L6491DTR

SO-14

Tape and reel

www.st.com

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