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STL8P4LLF6 데이터시트(PDF) 1 Page - STMicroelectronics |
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STL8P4LLF6 데이터시트(HTML) 1 Page - STMicroelectronics |
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1 / 14 page ![]() March 2015 DocID025617 Rev 2 1/14 This is information on a product in full production. www.st.com STL8P4LLF6 P- channel 40 V, 0.0175 Ω typ.,8 A, STripFET™ F6 Power MOSFET in a PowerFLAT™ 3.3 x 3.3 package Datasheet - production data Figure 1: Internal schematic diagram Features Order code VDS RDS(on) max. ID PTOT STL8P4LLF6 40 V 0.0205 Ω 8 A 2.9 W • Very low on-resistance • Very low gate charge • High avalanche ruggedness • Low gate drive power loss Applications • Switching applications Description This device is a P-channel Power MOSFET developed using the STripFET™ F6 technology, with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages. For the P-channel Power MOSFET, current polarity of voltages and current have to be reversed. Table 1: Device summary Order code Marking Package Packaging STL8P4LLF6 8P4F6 PowerFLAT™ 3.3 x 3.3 Tape and reel 1 2 3 4 PowerFLAT™ 3.3x3.3 |
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