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STL25N15F3 데이터시트(PDF) 3 Page - STMicroelectronics |
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STL25N15F3 데이터시트(HTML) 3 Page - STMicroelectronics |
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3 / 12 page ![]() STL25N15F3 Electrical ratings 3/12 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage (VGS = 0) 150 V VGS Gate-source voltage ± 20 V ID (1) 1. The value is rated according Rthj-c Drain current (continuous) at TC = 25 °C 25 A ID (2) 2. The value is rated according Rthj-pcb Drain current (continuous) at TC = 25 °C 6 A ID (2) Drain current (continuous) at TC = 100 °C 3.75 A IDM (3) 3. Pulse width limited by safe operating area Drain current (pulsed) 24 A PTOT (1) Total dissipation at TC = 25 °C 80 W PTOT (2) Total dissipation at TC = 25 °C 4 W TJ Tstg Operating junction temperature Storage temperature -55 to 150 °C Table 3. Thermal resistance Symbol Parameter Value Unit Rthj-case Thermal resistance junction-case (Drain) (steady state) 1.56 °C/W Rthj-pcb (1) 1. When mounted on FR-4 board of 1inch², 2oz Cu, t < 10 sec Thermal resistance junction-pcb 31.3 °C/W Table 4. Avalanche data Symbol Parameter Value Unit IAS Avalanche current repetitive or not repetitive, (pulse width limited by Tj Max) 2.5 A EAS Single pulse avalanche energy (starting Tj=25 °C, ID=IAS, VDD=50 V) 300 mJ Obsolete Product(s) - Obsolete Product(s) |
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