DocID023669 Rev 3

5/15

STL30P3LLH6

Electrical characteristics

Note:

For the P-channel Power MOSFETs the actual polarity of the voltages and the current must

be reversed.

Table 7. Source drain diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max. Unit

I

SD

Source-drain current

-

9

A

I

SDM

(1)

1.

Pulse width limited by safe operating area

Source-drain current (pulsed)

-

36

A

V

SD

(2)

2.

Pulsed: pulse duration = 300 μs, duty cycle 1.5%

Forward on voltage

I

SD

= 4.5 A, V

GS

= 0

-

1.1

V

t

rr

Reverse recovery time

I

SD

= 4.5 A, di/dt = 100 A/μs

V

DD

= 16 V, T

j

=150 °C

-15

ns

Q

rr

Reverse recovery charge

-

6.5

nC

I

RRM

Reverse recovery current

-

0.9

A