This is information on a product in full production.

April 2014

DocID023874 Rev 5

1/19

STL40C30H3LL

N-channel 30 V, 0.019

Ω typ., 10 A, P-channel 30 V, 0.024 Ω typ.,8 A

STripFET™ VI Power MOSFET in a PowerFLAT 5x6 d. i. package

Figure 1. Internal schematic diagram

Features

• R

DS(on)

* Q

g

industry benchmark

• Extremely low on-resistance R

DS(on)

• High avalanche ruggedness

• Low gate drive power losses

Applications

• Switching applications

Description

This device is a complementary N-channel and P-

channel Power MOSFET developed using

STripFET™ V (P-channel) and STripFET™ VI

DeepGATE™ (N-channel) technologies. The

resulting device exhibits low on-state resistance

and an FOM among the lowest in its voltage

class.

Note:

For the P-channel MOSFET actual polarity of voltages and current has to be reversed

1

2

3

4

PowerFLAT™5x6

double island

AM00623v2

Order code

STL40C30H3LL

N

30 V

0.021

Ω @ 10 V 10 A

P0.03

Ω @ 10 V 8 A

Table 1. Device summary

Order code

Marking

Packages

Packaging

STL40C30H3LL

40C30H3L

PowerFLAT 5x6 double island

Tape and reel

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