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전자부품 데이터시트 검색엔진 |
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전자부품 데이터시트 검색엔진 |
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STL42P4LLF6 데이터시트(PDF) 5 Page - STMicroelectronics |
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STL42P4LLF6 데이터시트(HTML) 5 Page - STMicroelectronics |
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5 / 14 page  STL42P4LLF6 Electrical characteristics DocID025618 Rev 2 5/14 Table 7: Source drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit VSD (1) Forward on voltage VGS = 0 V, ISD = 5 A - 1.1 V trr Reverse recovery time ISD = 5 A, di/dt = 100 A/µs, VDD = 32 V, Tj = 150 °C (see Figure 15: "Test circuit for inductive load switching and diode recovery times") - 26 ns Qrr Reverse recovery charge - 21 nC IRRM Reverse recovery current - 1.7 A Notes: (1) Pulse test: pulse duration = 300 µs, duty cycle 1.5% For the P-channel Power MOSFET, current polarity of voltages and current have to be reversed. |
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