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STL45P3LLH6 데이터시트(PDF) 5 Page - STMicroelectronics |
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STL45P3LLH6 데이터시트(HTML) 5 Page - STMicroelectronics |
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5 / 15 page ![]() STL45P3LLH6 Electrical characteristics DocID025822 Rev 1 5/15 Table 7: Source drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit VSD (1) Forward on voltage ISD = -6 A, VGS = 0 - -1.1 V trr Reverse recovery time ISD = -6 A, di/dt = 100 A/µs VDD = -16 V, Tj=150 °C - 20 ns Qrr Reverse recovery charge - 16 nC IRRM Reverse recovery current - -1.6 A Notes: (1) Pulsed: pulse duration = 300 µs, duty cycle 1.5% |
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