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110N10F7 데이터시트(PDF) 3 Page - STMicroelectronics |
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110N10F7 데이터시트(HTML) 3 Page - STMicroelectronics |
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3 / 15 page ![]() DocID024004 Rev 4 3/15 STL110N10F7 Electrical ratings 15 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage 100 V VGS Gate-source voltage ± 20 V ID (1) 1. This value is rated according to Rthj-c. Drain current (continuous) at TC = 25 °C 107 A ID (1) Drain current (continuous) at TC = 100 °C 75 A ID (2) 2. This value is rated according to Rthj-pcb. Drain current (continuous) at Tpcb = 25 °C 21 A ID (2) Drain current (continuous) at Tpcb=100 °C 14 A IDM (2)(3) 3. Pulse width limited by safe operating area. Drain current (pulsed) 84 A PTOT (1) Total dissipation at TC = 25 °C 136 W PTOT (2) Total dissipation at Tpcb = 25 °C 4.8 W EAS (4) 4. Starting Tj=25 °C, Id=18 A, Vdd=50 V Single pulse avalanche energy 490 mJ TJ Tstg Operating junction temperature Storage temperature -55 to 175 °C Table 3. Thermal resistance Symbol Parameter Value Unit Rthj-case Thermal resistance junction-case 1.1 °C/W Rthj-pcb (1) 1. When mounted on FR-4 board of 1inch², 2oz Cu, t < 10 sec Thermal resistance junction-pcb 31.3 °C/W |
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