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전자부품 데이터시트 검색엔진 |
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전자부품 데이터시트 검색엔진 |
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STP160N3LL 데이터시트(PDF) 5 Page - STMicroelectronics |
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STP160N3LL 데이터시트(HTML) 5 Page - STMicroelectronics |
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5 / 13 page  STP160N3LL Electrical characteristics DocID025073 Rev 3 5/13 Table 7: Source-drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit VSD (1) Forward on voltage VGS = 0 V, ISD = 60 A - 1.1 V trr Reverse recovery time ISD = 120 A, di/dt = 100 A/µs, VDD = 24 V (see Figure 15: "Test circuit for inductive load switching and diode recovery times") - 28.6 ns Qrr Reverse recovery charge - 22.8 nC IRRM Reverse recovery current - 1.6 A Notes: (1) Pulse test: pulse duration = 300 µs, duty cycle 1.5%. |
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