STPS3045C datasheet(2/13 Pages) STMICROELECTRONICS

2 / 13 page

Characteristics

STPS3045C

2/13

DocID3510 Rev 9

Characteristics

Table 2: Absolute ratings (limiting values, per diode, at 25 °C, unless otherwise specified)

Symbol

Parameter

Value

Unit

VRRM

Repetitive peak reverse voltage

IF(RMS)

Forward rms current

IF(AV)

Average forward current

δ = 0.5, square wave

TC = 155 °C

Per diode

Per device

IFSM

Surge non repetitive forward current

tp = 10 ms

sinusoidal

220

PARM(1)

Repetitive peak avalanche power

tp = 10 µs,

Tj = 125 °C

430

Tstg

Storage temperature range

-65 to +175

°C

Maximum operating junction temperature (2)

175

Maximum operating junction temperature (DC forward current

without reverse bias, t = 1 hour for D²PAK

200

Notes:

(1)For pulse time duration deratings, please refer to Figure 3. More details regarding the avalanche energy

measurements and diode validation in the avalanche are provided in the STMicroelectronics Application notes

AN1768, “Admissible avalanche power of Schottky diodes” and AN2025, “Converter improvement using Schottky

rectifier avalanche specification”.

(2)(dPtot/dTj) < (1/Rth(j-a)) condition to avoid thermal runaway for a diode on its own heatsink.

Table 3: Thermal parameters

Symbol

Parameter

Value

Unit

Rth(j-c)

Junction to case

TO-220AB / D²PAK

Per diode

1.60

°C/W

Total

0.95

TO-247

Per diode

1.5

Total

0.9

Rth(c)

Coupling

TO-220AB / D²PAK/ TO-247

0.3

When the diodes 1 and 2 are used simultaneously:

ΔTj (diode1) = P(diode1) x Rth(j-c) (per diode) + P(diode2) x Rth(c)

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