STPS6045C datasheet(3/9 Pages) STMICROELECTRONICS

부품명	STPS6045C

상세설명	Power Schottky Rectifier

PDF	9 Pages

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제조업체	STMICROELECTRONICS [STMicroelectronics]

홈페이지	http://www.st.com

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3 / 9 page

DocID4606 Rev 8

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STPS6045C

Characteristics

Table 4. Static electrical characteristics (per diode)

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

IR(1)

Reverse leakage current

Tj = 25 °C

VR = VRRM

500

µA

Tj = 125 °C

VF(1)

Forward voltage drop

Tj = 125 °C

IF = 30 A

0.53

0.63

Tj = 25 °C

IF = 60 A

0.84

Tj = 125 °C

IF = 60 A

0.68

0.78

1. Pulse test: tp = 380 µs,

δ < 2%

To evaluate the conduction losses use the following equation:

P + 0.48 x IF(AV) + 0.005 IF²(RMS)

Figure 1. Average forward power dissipation

versus average forward current (per diode)

Figure 2. Average current versus ambient

temperature (δ = 0.5, per diode)

Figure 3. Normalized avalanche power derating

versus pulse duration

Figure 4. Normalized avalanche power derating

versus junction temperature

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