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STR2550 데이터시트(PDF) 4 Page - STMicroelectronics |
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STR2550 데이터시트(HTML) 4 Page - STMicroelectronics |
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4 / 10 page ![]() Electrical characteristics STR2550 4/10 DocID022365 Rev 5 2 Electrical characteristics Tcase = 25 °C unless otherwise specified. Table 4. Electrical characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit ICBO Collector cut-off current (IE = 0) VCB = -500 V -10 µA V(BR)CBO Collector-base breakdown voltage (IE = 0) IC = -100 µA -500 V V(BR)CEO (1) 1. Pulse test: pulse duration ≤ 300 µs, duty cycle ≤ 2% Collector-emitter breakdown voltage (IB = 0) IC = -1 mA -500 V V(BR)EBO Emitter-base breakdown voltage (IC = 0) IE = -100 µA -7 V VCE(sat) (1) Collector-emitter saturation voltage IC = -20 mA IB = -2 mA IC = -50 mA IB = -10 mA -0.2 -0.3 V V VBE(sat) (1) Base-emitter saturation voltage IC = -50 mA IB = -10 mA -1.0 V VBE(on) Base-emitter on voltage IC = -50 mA VCE = -10 V -1.1 V hFE (1) DC current gain IC = -1 mA VCE = -10 V IC = -50 mA VCE = -10 V IC = -100 mA VCE = -10 V 100 100 10 300 |
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