This is information on a product in full production.

July 2014

DocID024437 Rev 2

1/16

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STS3P6F6

P-channel 60 V, 0.13

Ω typ., 3 A STripFET™ F6

Power MOSFET in a SO-8 package

Datasheet

Figure 1. Internal schematic diagram

Features

• High avalanche ruggedness

• Low gate drive power losses

Applications

• Switching applications

Description

This device is a P-channel Power MOSFET

technology, with a new gate structure. The

resulting Power MOSFET exhibits the lowest

Note:

For the P-channel Power MOSFET the actual polarity of the voltages and the current must

be reversed.

SO-8

1

2

3

4

7

6 5

8

D (5,6,7,8)

G (4)

S (1,2,3)

Order code

STN3P6F6

60 V

0.16

Ω @ 10 V

3 A

Table 1. Device summary

Order code

Marking

Package

Packaging

STS3P6F6

3K60

SO-8

Tape and reel

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