STS10DN3LH5 datasheet(4/13 Pages) STMICROELECTRONICS

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Electrical characteristics

STS10DN3LH5

4/13

Doc ID 15624 Rev 1

Electrical characteristics

(TCASE = 25 °C unless otherwise specified)

Table 4.

Static

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source

breakdown Voltage

ID = 250 µA, VGS= 0

IDSS

Zero gate voltage

drain current (VGS = 0)

VDS = 30 V

VDS = 30 V, Tc = 125 °C

µA

IGSS

Gate body leakage

current

(VDS = 0)

VGS = ± 22 V

100

VGS(th)

Gate threshold voltage VDS = VGS, ID = 250 µA

RDS(on)

Static drain-source on

resistance

VGS = 10 V, ID= 5 A

0.019

0.021

Ω

VGS = 4.5 V, ID= 5 A

0.023

0.028

Ω

Table 5.

Dynamic

Symbol

Parameter

Test conditions

Min

Typ.

Max.

Unit

Ciss

Coss

Crss

Input capacitance

Output capacitance

Reverse transfer

capacitance

VDS = 25 V, f = 1 MHz,

VGS = 0

475

Qgs

Qgd

Total gate charge

Gate-source charge

Gate-drain charge

VDD = 15 V, ID = 10 A

VGS = 5 V

(Figure 14)

4.6

1.7

1.9

Qgs1

Qgs2

Pre Vth gate-to-source

charge

Post Vth gate-to-

source charge

VDD = 15 V, ID = 10A

VGS = 5 V

(Figure 19)

0.67

0.84

Gate input resistance

f = 1 MHz gate bias

Bias = 0 test signal

level = 20 mV

open drain

-2.5

Ω

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