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TLP3530 데이터시트(PDF) 2 Page - Toshiba Semiconductor |
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TLP3530 데이터시트(HTML) 2 Page - Toshiba Semiconductor |
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2 / 6 page ![]() TLP3530 2002-09-25 2 Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Forward current IF 50 mA Forward current derating (Ta ≥ 53°C) ∆IF / °C -0.7 mA / °C Peak forward current (100µs pulse, 100pps) IFP 1 A Reverse voltage VR 5 V Junction temperature Tj 125 °C Off -state output terminal voltage VDRM 400 V 1.0(per 1 ch) Ta=40°C 1.4(per 2 ch) 0.7(per 1 ch) On -state RMS Current Ta=60°C IT(RMS) 1.0(per 2ch) A -14.3(per 1ch) On -state current derating(Ta ≥ 40°C) ∆IT / °C -20.0(per 2 ch) mA / °C Peak current from snubber circuit (100µs pulse, 120pps) ISP 2 A Peak nonrepetitive surge current(50Hz,peak) ITSM 10 A Junction temperature Tj 110 °C Storage temperature range Tstg -40~125 °C Operating temperature range Topr -20~80 °C Lead soldering temperature (10s) Tsol 260 °C Isolation voltage (AC, 1min., R.H.≤ 60%) (Note) BVS 2500 Vrms (Note): Device considered a two terminal: LED side pins shorted together and detector side pins shorted together. Recommended Operating Conditions Characteristic Symbol Min Typ. Max Unit Supply voltage VAC ― ― 120 Vac Forward voltage IF 15 20 25 mA Peak current from snubber circuit ISP ― ― 1 A Operating temperature Topr -20 ― 80 °C |
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