This is information on a product in full production.

March 2014

DocID026116 Rev 1

1/13

STT5N2VH5

N-channel 20 V, 0.025

Ω typ., 5 A STripFET™ V Power MOSFET

in a SOT23-6L package

Datasheet — production data

Figure 1. Internal schematic diagram

Features

• Very low profile package

• Conduction losses reduced

• Switching losses reduced

• 2.5 V gate drive

• Very low threshold device

Applications

• Switching applications

Description

This device is an N-channel Power MOSFET

developed using STMicroelectronics’

STripFET™V technology. The device has been

optimized to achieve very low on-state resistance,

contributing to a FOM that is among the best in its

class.

1

2

3

4

5

6

SOT23-6L

Order code

STT5N2VH5

20 V

0.04

Ω (V

GS

=2.5 V)

5 A

1.6 W

Table 1. Device summary

Order code

Marking

Packages

Packaging

STT5N2VH5

STD1

SOT23-6L

Tape and reel

www.st.com