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STTH50W03C 데이터시트(PDF) 4 Page - STMicroelectronics

부품명 STTH50W03C
상세설명  Low reverse recovery current
PDF  9 Pages
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제조업체  STMICROELECTRONICS [STMicroelectronics]
홈페이지  http://www.st.com
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STTH50W03C 데이터시트(HTML) 4 Page - STMicroelectronics

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Characteristics
STTH50W03C
4/9
DocID024734 Rev1
Figure 5. Peak reverse recovery current versus
dIF/dt (typical values, per diode)
Figure 6. Reverse recovery time versus dIF/dt
(typical values, per diode)
0
2
4
6
8
10
12
14
16
0
50
100
150
200
250
300
350
400
450
500
IRM (A)
IF = IF(AV)
V
R = 200 V
T
j = 125 °C
dIF/dt(A/µs)
0
10
20
30
40
50
60
70
80
90
100
0
50
100
150
200
250
300
350
400
450
500
tRR(ns)
I
F = IF(AV)
VR= 200 V
Tj = 125°C
dIF/dt(A/µs)
Figure 7. Reverse recovery charges versus
dIF/dt (typical values, per diode)
Figure 8. Reverse recovery softness factor
versus dIF/dt (typical values, per diode)
0
50
100
150
200
250
300
0
50
100
150
200
250
300
350
400
450
500
QRR(nC)
IF=IF(AV)
VR=200 V
Tj=125 °C
dIF/dt(A/µs)
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0
50
100
150
200
250
300
350
400
450
500
S FACTOR
IF=IF(AV)
VR=200 V
Tj=125 °C
dIF/dt(A/µs)
Figure 9. Relative variations of dynamic
parameters versus junction temperature
Figure 10. Transient peak forward voltage
versus dIF/dt (typical values, per diode)
0.0
0.5
1.0
1.5
2.0
25
50
75
100
125
Tj(°C)
IRM
S
FACTOR
QRR
IF=IF(AV)
VR=200 V
Reference: T
j=125 °C
0
1
2
3
4
5
200
250
300
350
400
450
500
VFP(V)
dIF/dt(A/µs)
IF= IF(AV)
Tj= 125°C



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