STTH60AC06C datasheet(4/13 Pages) STMICROELECTRONICS

4 / 13 page

Characteristics

STTH60AC06C

4/13

DocID024886 Rev3

Figure 5. Relative variation of thermal

impedance, junction to case, versus pulse

duration (TO-3PF)

Figure 6. Peak reverse recovery current versus

dIF/dt (typical values, per diode)

Zth( j-c) /Rth( j-c)

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1.E-03

1.E-02

1.E-01

1.E+00

1.E+01

1.E+02

t (s)

Single pulse

TO- 3PF

IRM (A)

50 100 150 200 250 300 350 400 450 500

dIF/dt(A/µs)

IF = 30 A

R = 400 V

j = 125 °C

Figure 7. Reverse recovery time versus dIF/dt

(typical values, per diode)

Figure 8. Reverse recovery charges versus

dIF/dt (typical values, per diode)

tRR(ns)

100

150

200

250

300

350

400

50 100 150 200 250 300 350 400 450 500

dIF/dt(A/µs)

IF = 30 A

R = 400 V

j = 125 °C

QRR(nC)

500

1000

1500

2000

2500

50 100 150 200 250 300 350 400 450 500

dIF/dt(A/µs)

IF = 30 A

R = 400 V

j = 125 °C

Figure 9. Reverse recovery softness factor

versus dIF/dt (typical values, per diode)

Figure 10. Relative variations of dynamic

parameters versus junction temperature

S FACTOR

0.0

0.5

1.0

1.5

2.0

2.5

50 100 150 200 250 300 350 400 450 500

dIF/dt(A/µs)

IF = 30 A

R = 400 V

j = 125 °C

0.0

0.5

1.0

1.5

2.0

100

125

S FACTOR

Tj(°C)

F = 30 A; VR = 400 V

Reference: Tj = 125 °C

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