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STU7NF25 데이터시트(PDF) 5 Page - STMicroelectronics |
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STU7NF25 데이터시트(HTML) 5 Page - STMicroelectronics |
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5 / 12 page ![]() DocID025041 Rev 1 5/12 STU7NF25 Electrical characteristics 12 Table 8. Source drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit I SD I SDM Source-drain current Source-drain current (pulsed) - 8 32 A A V SD Forward on voltage I SD =8 A, V GS =0 V - 1.5 V t rr Reverse recovery time I SD = 8 A, di/dt = 100 A/μs, V DD = 50 V (see Figure 15) - 115 ns Q rr Reverse recovery charge - 470 nC I RRM Reverse recovery current - 8.5 A t rr Reverse recovery time I SD = 8 A, di/dt = 100 A/μs, V DD = 50 V, T J = 150 °C (see Figure 15) - 130 ns Q rr Reverse recovery charge - 580 nC I RRM Reverse recovery current - 9.5 A |
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