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T810T-8FP 데이터시트(PDF) 3 Page - STMicroelectronics

부품명 T810T-8FP
상세설명  8 A logic level Triac
PDF  9 Pages
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제조업체  STMICROELECTRONICS [STMicroelectronics]
홈페이지  http://www.st.com
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T810T-8FP 데이터시트(HTML) 3 Page - STMicroelectronics

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DocID025736 Rev 2
3/9
T810T-8FP
Characteristics
Table 4. Static characteristics
Symbol
Test conditions
Value
Unit
VT
(1)
ITM = 11.3 A, tp = 380 µs
Tj = 25 °C
Max.
1.55
V
Vt0
(1)
Threshold voltage
Tj = 150 °C
Max.
0.85
V
Rd
(1)
Dynamic resistance
Tj = 150 °C
Max.
57
m
Ω
IDRM
IRRM
VDRM = VRRM = 800 V
Tj = 25 °C
Max.
5µA
Tj = 125 °C
0.8
mA
VDRM = VRRM = 600 V
Tj = 150 °C
Max.
2.4
1.
For both polarities of A2 referenced to A1
Table 5. Thermal resistance
Symbol
Parameter
Value
Unit
Rth(j-c)
Junction to case (AC)
3.8
°C/W
Rth(j-a)
Junction to ambient (DC)
60
°C/W
Figure 1. Maximum power dissipation versus
on-state rms current (full cycle)
Figure 2. On-state rms current versus case
temperature (full cycle)
0
2
4
6
8
10
01
23
456
78
180°
I
(A)
T(RMS)
P(W)
IT(RMS)(A)
0
1
2
3
4
5
6
7
8
9
0
25
50
75
100
125
150
=180 °
T (°C)
C
Figure 3. On-state rms current versus ambient
temperature (free air convection)
Figure 4. Relative variation of thermal
impedance versus pulse duration
I
(A)
T(RMS)
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0
25
50
75
100
125
150
α = 180°
T (°C)
a
K = [Zth / Rth]
1.0E-02
1.0E-01
1.0E+00
1.0E-03
1.0E-02
1.0E-01
1.0E+00
1.0E+01
1.0E+02
1.0E+03
Zth(j-c)
Zth(j-a)
tp (s)



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