| 전자부품 데이터시트 검색엔진 |
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TMS417409A 데이터시트(PDF) 21 Page - National Semiconductor (TI) |
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TMS417409A 데이터시트(HTML) 21 Page - National Semiconductor (TI) |
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21 / 37 page ![]() TMS416409A, TMS417409A, TMS426409A, TMS427409A 4194304 BY 4-BIT EXTENDED DATA OUT DYNAMIC RANDOM-ACCESS MEMORIES SMKS893B – AUGUST 1996 – REVISED APRIL 1997 21 POST OFFICE BOX 1443 • HOUSTON, TEXAS 77251–1443 PARAMETER MEASUREMENT INFORMATION RAS CAS Address W OE DQ1 – DQ4 tRWC Row Column Don’t Care Don’t Care Don’t Care Data Out Don’t Care Don’t Care Data In tRAS tRCD tT tCAS tRP tCRP tCP tT tCAH tASC tRAH tASR tRAD tRCS tRWD tRWL tWP tAWD tCWD tCAC tDS tDH tAA tCLZ tRAC tOEA tOEZ tOED tOEH See Note A tCWL Hi-Z NOTE A: Output can go from the high-impedance state to an invalid-data state prior to the specified access time. Figure 6. Read-Write-Cycle Timing |
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