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2SC4797 데이터시트(PDF) 2 Page - Hitachi Semiconductor

부품명 2SC4797
상세설명  Silicon NPN Triple Diffused
PDF  4 Pages
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제조업체  HITACHI [Hitachi Semiconductor]
홈페이지  http://www.renesas.com/eng
Logo HITACHI - Hitachi Semiconductor

2SC4797 데이터시트(HTML) 2 Page - Hitachi Semiconductor

  2SC4797 Datasheet HTML 1Page - Hitachi Semiconductor 2SC4797 Datasheet HTML 2Page - Hitachi Semiconductor 2SC4797 Datasheet HTML 3Page - Hitachi Semiconductor 2SC4797 Datasheet HTML 4Page - Hitachi Semiconductor  
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Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
———————————————————————————————————————————
Collector to emitter breakdown V(BR)CEO
900
—
—
V
IC = 10 mA, RBE = ∞
voltage
———————————————————————————————————————————
Emitter to base breakdown
V(BR)EBO
6—
—
V
IE = 10 mA, IC = 0
voltage
———————————————————————————————————————————
Collector cutoff current
ICES
—
—
500
µA
VCE = 1700 V, RBE = 0
———————————————————————————————————————————
DC current transfer ratio
hFE
——35
VCE = 5 V, IC = 1A
———————————————————————————————————————————
Collector to emitter saturation
VCE(sat)
——5
V
IC = 7 A, IB = 1.4 A
voltage
———————————————————————————————————————————
Base to emitter saturation
VBE(sat)
—
—
1.5
V
IC = 7 A, IB = 1.4 A
voltage
———————————————————————————————————————————
Fall time
tf
—
—
0.6
µs
ICP = 7 A, IB1 = 1.4 A
IB2 = –2.5 A, fH = 31.5 kHz
———————————————————————————————————————————
Maximum Collector Power Dissipation Curve
80
60
40
20
0
50
100
150
200
Case Temperature
Tc (°C)
Maximum Safe Operation Area
20
16
12
8
4
400
800
1200
1600
2000
Collector to Emitter Voltage
V
(V)
CE
0
(100 V, 20 A)
(900 V, 3 A)
0.5 mA
f = 15.75 kHz
Ta = 25 °C
For picture tube arcing
2SC4797



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