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L6751C 데이터시트(PDF) 43 Page - STMicroelectronics

부품명 L6751C
상세설명  Digitally controlled dual PWM for Intel VR12 and AMD SVI
PDF  57 Pages
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제조업체  STMICROELECTRONICS [STMicroelectronics]
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L6751C 데이터시트(HTML) 43 Page - STMicroelectronics

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L6751C
Efficiency optimization
57
9.4
Gate drive control (GDC)
Gate drive control (GDC) is a proprietary function which allows the L6751C to dynamically
control the Power MOSFET driving voltage in order to further optimize the overall system
efficiency. According to the SVI power state commanded and the configuration received
through the PMBus, the device switches this pin (GDC) between the VCC5 or VDRV
(inputs). By connecting the power supply of external drivers directly to this pin, it is then
possible to carefully control the external MOSFET driving voltage.
In fact, high driving voltages are required to obtain good efficiency in high loading
conditions. On the contrary, in lower loading conditions, such high driving voltage penalizes
efficiency because of high losses in Qgs. GDC allows to tune the MOSFET driving voltage
according to the delivered current.
The default configuration considers GDC always switched to VDRV except when entering
power states higher than PS01h (included): in this case, to further increase efficiency,
simply supply the Phase1 and Phase2 driver through the GDC pin. Their driving voltage is
automatically updated as lower power states are commanded through the SVI interface.
Further optimization may be possible by properly setting the automatic GDC threshold
through the dedicated PMBus command and/or pin-strapping. It is then possible to enable
the gate driving voltage switchover even in PS00h. According to the positioning of the
threshold compared with DPM thresholds, it is possible to achieve different performances.
Simulations and/or bench tests may be of help in defining the best performing configuration
achievable with the active and passive components available.
Figure 13 allows the efficiency improvements with DPM/GDC enabled to be compared with
respect to the standard solution.
Note:
Systems supporting S3 power state may have the VDRV supplied by an OR-ing connection
between 5 Vsby and 12 V or different supply voltage for S0. It is recommended to connect
closely, between the VDRV and VCC5 pins, the OR-ing diode connecting VDRV to the 5
Vsby.
Figure 13. Efficiency performance with and without enhancements (DPM, GDC)



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