2SC5773

2

Absolute Maximum Ratings (Ta = 25

°C)

Item

Symbol

Ratings

Unit

Collector to base voltage

V

CBO

15

V

Collector to emitter voltage

V

CEO

6V

Emitter to base voltage

V

EBO

1.5

V

Collector current

I

C

80

mA

Collector power dissipation

Pc

700*

mW

Junction temperature

Tj

150

°C

Storage temperature

Tstg

–55 to +150

°C

* When using aluminium ceramic board (25 x 60 x 0.7 mm)

Electrical Characteristics (Ta = 25

°C)

Item

Symbol

Min

Typ

Max

Unit

Test Conditions

Collector to base breakdown

voltage

V

(BR)CBO

15

——V

I

Collector cutoff current

I

CBO

——

1

µAV

Collector cutoff current

I

CEO

——

1

mA

V

Emitter cutoff current

I

EBO

——

10

µAV

DC current transfer ratio

h

FE

80

120

160

V

V

Collector output capacitance

Cob

—

1.25

1.8

pF

V

f = 1 MHz

Reverse transfer capacitance Cre

—

0.98

—

pF

V

f = 1 MHz

Gain bandwidth product

f

T

8

10.8

—

GHz

V

f = 1 GHz

S

|S

2

—

11

—

dB

V

f = 1 GHz

Power gain

PG

9

11.9

—

dB

V

f = 900 MHz

Noise figure

NF

—

1.1

1.9

dB

V

f = 900 MHz