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STM8L101x2 데이터시트(PDF) 45 Page - STMicroelectronics

부품명 STM8L101x2
상세설명  Auto-wakeup unit
PDF  88 Pages
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제조업체  STMICROELECTRONICS [STMicroelectronics]
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STM8L101x2 데이터시트(HTML) 45 Page - STMicroelectronics

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STM8L101x1 STM8L101x2 STM8L101x3
Electrical parameters
63
Current consumption of on-chip peripherals
Measurement made for fMASTER = from 2 MHz to 16 MHz
9.3.4
Clock and timing characteristics
Internal clock sources
Subject to general operating conditions for VDD and TA.
High speed internal RC oscillator (HSI)
Table 21. Peripheral current consumption
Symbol
Parameter
Typ. VDD = 3.0 V
Unit
IDD(TIM2)
TIM2 supply current (1)
1. Data based on a differential IDD measurement between all peripherals off and a timer counter running at
16 MHz. The CPU is in Wait mode in both cases. No IC/OC programmed, no I/O pin toggling. Not tested in
production.
9
µA/MHz
IDD(TIM3)
TIM3 supply current (1)
9
IDD(TIM4)
TIM4 timer supply current (1)
4
IDD(USART)
USART supply current (2)
2. Data based on a differential IDD measurement between the on-chip peripheral when kept under reset and
not clocked and the on-chip peripheral when clocked and not kept under reset. The CPU is in Wait mode in
both cases. No I/O pin toggling. Not tested in production.
7
IDD(SPI)
SPI supply current (2)
4
IDD(I²C1)
I2C supply current (2)
4
IDD(COMP)
Comparator supply current (2)
20
µA
Table 22. HSI oscillator characteristics (1)
1. VDD = 3.0 V, TA = -40 to 125 °C unless otherwise specified.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
fHSI
Frequency
VDD = 3.0 V
-
16
-
MHz
ACCHSI
Accuracy of HSI
oscillator
(factory calibrated)
VDD = 3.0 V, TA = 25 °C
-1
-
1
%
VDD = 3.0 V, -10 °C ≤TA ≤ 85 °C
-2.5(2)
-2(2)
%
VDD = 3.0 V, -10 °C ≤TA ≤ 125 °C
-4.5(2)
-2(2)
%
VDD = 3.0 V, 0 °C ≤TA ≤ 55 °C
-1.5(2)
2. Guaranteed by characterization results.
-1.5(2)
%
VDD = 3.0 V, -10 °C ≤TA ≤ 70 °C
-2(2)
-2(2)
%
1.65 V
≤ VDD ≤ 3.6 V,
-40 °C
≤ TA ≤125 °C
-4.5(2)
-3(2)
%
IDD(HSI)
HSI oscillator power
consumption
-
-
70
100(2)
µA



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