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STM8S003F3 데이터시트(PDF) 65 Page - STMicroelectronics |
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STM8S003F3 데이터시트(HTML) 65 Page - STMicroelectronics |
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65 / 104 page ![]() DocID018576 Rev 9 65/104 STM8S003F3 STM8S003K3 Electrical characteristics 87 9.3.5 Memory characteristics RAM and hardware registers Flash program memory and data EEPROM General conditions: TA = -40 to 85 °C. Table 36. RAM and hardware registers Symbol Parameter Conditions Min Unit VRM Data retention mode(1) 1. Minimum supply voltage without losing data stored in RAM (in halt mode or under reset) or in hardware registers (only in halt mode). Guaranteed by design. Halt mode (or reset) VIT-max(2) 2. Refer to Table 20 on page 50 for the value of VIT-max. V Table 37. Flash program memory and data EEPROM Symbol Parameter Conditions Min(1) 1. Data based on characterization results. Typ Max Unit VDD Operating voltage (all modes, execution/write/erase) fCPU ≤ 16 MHz 2.95 - 5.5 V tprog Standard programming time (including erase) for byte/word/block (1 byte/4 bytes/64 bytes) -- 6.0 6.6 ms Fast programming time for 1 block (64 bytes) -- 3.0 3.3 ms terase Erase time for 1 block (64 bytes) - - 3.0 3.3 ms NRW Erase/write cycles(2) (program memory) 2. The physical granularity of the memory is 4 bytes, so cycling is performed on 4 bytes even when a write/erase operation addresses a single byte. TA = 85 °C 100 - - cycles Erase/write cycles(2) (data memory) 100 k - - tRET Data retention (program memory) after 100 erase/write cycles at TA = 85 °C TRET = 55° C 20 - - years Data retention (data memory) after 10 k erase/write cycles at TA = 85 °C 20 - - Data retention (data memory) after 100 k erase/write cycles at TA = 85 °C TRET = 85° C 1.0 - - IDD Supply current (Flash programming or erasing for 1 to 128 bytes) -- 2.0 - mA |
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