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STM8S003F3 데이터시트(PDF) 65 Page - STMicroelectronics

부품명 STM8S003F3
상세설명  Extended instruction set
PDF  104 Pages
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STM8S003F3 데이터시트(HTML) 65 Page - STMicroelectronics

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STM8S003F3 STM8S003K3
Electrical characteristics
87
9.3.5
Memory characteristics
RAM and hardware registers
Flash program memory and data EEPROM
General conditions: TA = -40 to 85 °C.
Table 36. RAM and hardware registers
Symbol
Parameter
Conditions
Min
Unit
VRM
Data retention mode(1)
1. Minimum supply voltage without losing data stored in RAM (in halt mode or under reset) or in hardware
registers (only in halt mode). Guaranteed by design.
Halt mode (or reset)
VIT-max(2)
2. Refer to Table 20 on page 50 for the value of VIT-max.
V
Table 37. Flash program memory and data EEPROM
Symbol
Parameter
Conditions
Min(1)
1. Data based on characterization results.
Typ
Max
Unit
VDD
Operating voltage
(all modes, execution/write/erase)
fCPU 16 MHz
2.95
-
5.5
V
tprog
Standard programming time (including
erase) for byte/word/block
(1 byte/4 bytes/64 bytes)
--
6.0
6.6
ms
Fast programming time for 1 block (64
bytes)
--
3.0
3.3
ms
terase
Erase time for 1 block (64 bytes)
-
-
3.0
3.3
ms
NRW
Erase/write cycles(2)
(program memory)
2. The physical granularity of the memory is 4 bytes, so cycling is performed on 4 bytes even when a
write/erase operation addresses a single byte.
TA = 85 °C
100
-
-
cycles
Erase/write cycles(2)
(data memory)
100 k
-
-
tRET
Data retention (program memory)
after 100 erase/write cycles at
TA = 85 °C
TRET = 55° C
20
-
-
years
Data retention (data memory) after
10 k erase/write cycles at TA = 85 °C
20
-
-
Data retention (data memory) after
100 k erase/write cycles at TA = 85 °C
TRET = 85° C
1.0
-
-
IDD
Supply current (Flash programming or
erasing for 1 to 128 bytes)
--
2.0
-
mA



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