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전자부품 데이터시트 검색엔진 |
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전자부품 데이터시트 검색엔진 |
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STM32F048T6 데이터시트(PDF) 66 Page - STMicroelectronics |
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STM32F048T6 데이터시트(HTML) 66 Page - STMicroelectronics |
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66 / 98 page  Electrical characteristics STM32F048C6 STM32F048G6 STM32F048T6 66/98 DocID026007 Rev 6 All I/Os are CMOS- and TTL-compliant (no software configuration required). Their characteristics cover more than the strict CMOS-technology or TTL parameters. The coverage of these requirements is shown in Figure 18 for standard I/Os, and in Figure 19 for 5 V-tolerant I/Os. The following curves are design simulation results, not tested in production. RPD Weak pull-down equivalent resistor(3) VIN = - VDDIOx 25 40 55 kΩ CIO I/O pin capacitance - - 5 - pF 1. Data based on design simulation only. Not tested in production. 2. The leakage could be higher than the maximum value, if negative current is injected on adjacent pins. Refer to Table 46: I/O current injection susceptibility . 3. Pull-up and pull-down resistors are designed with a true resistance in series with a switchable PMOS/NMOS. This PMOS/NMOS contribution to the series resistance is minimal (~10% order). Table 47. I/O static characteristics (continued) Symbol Parameter Conditions Min Typ Max Unit |
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