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STM32F042F6 데이터시트(PDF) 49 Page - STMicroelectronics

부품명 STM32F042F6
상세설명  Reset and power management
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STM32F042F6 데이터시트(HTML) 49 Page - STMicroelectronics

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STM32F042x4 STM32F042x6
Electrical characteristics
89
6.3.4
Embedded reference voltage
The parameters given in Table 25 are derived from tests performed under the ambient
temperature and supply voltage conditions summarized in Table 21: General operating
conditions
.
6.3.5
Supply current characteristics
The current consumption is a function of several parameters and factors such as the
operating voltage, ambient temperature, I/O pin loading, device software configuration,
operating frequencies, I/O pin switching rate, program location in memory and executed
binary code.
The current consumption is measured as described in Figure 14: Current consumption
measurement scheme
.
All Run-mode current consumption measurements given in this section are performed with a
reduced code that gives a consumption equivalent to CoreMark code.
VPVD6
PVD threshold 6
Rising edge
2.66
2.78
2.9
V
Falling edge
2.56
2.68
2.8
V
VPVD7
PVD threshold 7
Rising edge
2.76
2.88
3
V
Falling edge
2.66
2.78
2.9
V
VPVDhyst(1)
PVD hysteresis
-
-
100
-
mV
IDD(PVD)
PVD current consumption
-
-
0.15
0.26(1)
µA
1. Guaranteed by design, not tested in production.
Table 24. Programmable voltage detector characteristics (continued)
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Table 25. Embedded internal reference voltage
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VREFINT
Internal reference voltage –40 °C < TA < +105 °C
1.2
1.23
1.25
V
tSTART
ADC_IN17 buffer startup
time
--
-
10(1)
µs
tS_vrefint
ADC sampling time when
reading the internal
reference voltage
-
4(1)
1. Guaranteed by design, not tested in production.
--
µs
∆VREFINT
Internal reference voltage
spread over the
temperature range
VDDA = 3 V
-
-
10(1)
mV
TCoeff
Temperature coefficient
-
- 100(1)
-
100(1) ppm/°C



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