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STM32F358XC 데이터시트(PDF) 116 Page - STMicroelectronics |
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STM32F358XC 데이터시트(HTML) 116 Page - STMicroelectronics |
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116 / 134 page ![]() Electrical characteristics STM32F358xC 116/134 DocID025540 Rev 4 PGA gain Non inverting gain value - -2 - - -4 - - -8 - - -16 - - Rnetwork R2/R1 internal resistance values in PGA mode (2) Gain=2 - 5.4/5.4 - k Ω Gain=4 - 16.2/5.4 - Gain=8 - 37.8/5.4 - Gain=16 - 40.5/2.7 - PGA gain error PGA gain error - -1% - 1% Ibias OPAMP input bias current - - - ±0.2(3) µA PGA BW PGA bandwidth for different non inverting gain PGA Gain = 2, Cload = 50pF, Rload = 4 K Ω -4 - MHz PGA Gain = 4, Cload = 50pF, Rload = 4 K Ω -2 - PGA Gain = 8, Cload = 50pF, Rload = 4 K Ω -1 - PGA Gain = 16, Cload = 50pF, Rload = 4 K Ω -0.5 - en Voltage noise density @ 1KHz, Output loaded with 4 K Ω -109 - @ 10KHz, Output loaded with 4 K Ω -43 - 1. Guaranteed by design, not tested in production. 2. R2 is the internal resistance between OPAMP output and OPAMP inverting input. R1 is the internal resistance between OPAMP inverting input and ground. The PGA gain =1+R2/R1 3. Mostly TTa I/O leakage, when used in analog mode. Table 73. Operational amplifier characteristics(1) (continued) Symbol Parameter Condition Min Typ Max Unit nV Hz ----------- |
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