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STM32F769AI 데이터시트(PDF) 158 Page - STMicroelectronics

부품명 STM32F769AI
상세설명  Dual mode Quad-SPI
PDF  255 Pages
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제조업체  STMICROELECTRONICS [STMicroelectronics]
홈페이지  http://www.st.com
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STM32F769AI 데이터시트(HTML) 158 Page - STMicroelectronics

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Electrical characteristics
STM32F765xx STM32F767xx STM32F768Ax STM32F769xx
158/255
DocID029041 Rev 4
tBE
Bank erase time
Program/erase
parallelism (PSIZE) = x 8
-16
32
s
Program/erase
parallelism (PSIZE) = x 16
-11
22
Program/erase
parallelism (PSIZE) = x 32
-8
16
Vprog
Programming voltage
32-bit program operation
2.7
-
3
V
16-bit program operation
2.1
-
3.6
V
8-bit program operation
1.7
-
3.6
V
1. Guaranteed by characterization results.
2. The maximum programming time is measured after 100K erase operations.
Table 58. Flash memory programming with VPP
Symbol
Parameter
Conditions
Min(1)
Typ
Max(1)
1. Guaranteed by design.
Unit
tprog
Double word programming
TA = 0 to +40 °C
VDD = 3.3 V
VPP = 8.5 V
-
16
100(2)
2. The maximum programming time is measured after 100K erase operations.
μs
tERASE32KB Sector (32 KB) erase time
-
180
-
ms
tERASE128KB Sector (128 KB) erase time
-
450
-
tERASE256KB Sector (256 KB) erase time
-
900
-
tME
Mass erase time
-
6.9
-
s
Vprog
Programming voltage
-
2.7
-
3.6
V
VPP
VPP voltage range
-
7
-
9
V
IPP
Minimum current sunk on
the VPP pin
-10
-
-
mA
tVPP(3)
3. VPP should only be connected during programming/erasing.
Cumulative time during
which VPP is applied
-
-
-
1
hour
Table 59. Flash memory endurance and data retention
Symbol
Parameter
Conditions
Value
Unit
Min(1)
NEND
Endurance
TA = –40 to +85 °C (6 suffix versions)
TA = –40 to +105 °C (7 suffix versions)
10
kcycles
tRET
Data retention
1 kcycle(2) at TA = 85 °C
30
Years
1 kcycle(2) at TA = 105 °C
10
10 kcycles(2) at TA = 55 °C
20
Table 57. Flash memory programming (dual bank configuration
nDBANK=0) (continued)
Symbol
Parameter
Conditions
Min(1)
Typ
Max(1) Unit



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