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DS1251P 데이터시트(PDF) 13 Page - Dallas Semiconductor |
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DS1251P 데이터시트(HTML) 13 Page - Dallas Semiconductor |
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13 / 22 page ![]() DS1251/DS1251P 13 of 22 POWER-DOWN/POWER-UP TIMING Over the operating range (3.3V) PARAMETER SYMBOL MIN TYP MAX UNITS NOTES CE at VIH before Power-Down tPD 0 ms VCC Slew from VPF(max) to VPF(min)( CE at VIH) tF 300 ms VCC Slew from VPF(max) to VPF(min)( CE at VIH) tR 0 ms CE at VIH after Power-Up tREC 1.5 2.5 ms (TA = +25°C) PARAMETER SYMBOL MIN TYP MAX UNITS NOTES Expected Data Retention Time tDR 10 years 9 Warning: Under no circumstances are negative undershoots of any amplitude allowed when device is in battery-backup mode. |
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